Light Emission Analysis of Trench Gate Oxides of Power Devices
نویسندگان
چکیده
This paper describes the analysis results of the trench oxide of power devices by means of light emission analysis. Localized electron injection was observed at the upper corners of the trench edges. In addition, it was found that the electron injection into the edge of trench oxide was consistently larger than that into the center of the trench oxide during the electrical stressing. From these results, we conclude that the oxide shape of the upper corner of the trench edge largely determines the reliability of the trench gate structure.
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